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Volumn 5, Issue 10, 2005, Pages 2070-2073

Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; METAL-INDUCED ASSEMBLY; QUANTUM DOT ORDERING;

EID: 27544510727     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl051719d     Document Type: Article
Times cited : (27)

References (23)
  • 18
    • 27544474069 scopus 로고    scopus 로고
    • note
    • The difference between island and nanowire growth is at least in part due to the catalytic nature of Au in the VLS process; nanowires are most successfully grown from compound (gas) sources and not from elemental effusion sources such as the one used in the present study. In addition, island location away from Au sites is likely related to the lattice misfit between Ge and Si as we have found that Ge deposition on a Au-decorated Ge surface results in Ge island growth at Au sties.
  • 22


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.