SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 592, Issue 1-3, 2005, Pages 65-71

Studying the lateral composition in Ge quantum dots on Si(0 0 1) by conductive atomic force microscopy

(6) Xue, F a Qin, J a Cui, J a Fan, Y L a Jiang, Z M a Yang, X J a

a FUDAN UNIVERSITY (China)

Author keywords

Composition profile; Conductance; Conductive atomic force microscopy (C AFM); Ge; Quantum dots (QDs); Si

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ETCHING; MOLECULAR BEAM EPITAXY; SAMPLING; SEMICONDUCTOR QUANTUM DOTS; SILICON;

COMPOSITION PROFILE; CONDUCTANCE; CONDUCTIVE ATOMIC FORCE MICROSCOPY (C-AFM); GROWTH TEMPERATURES;

GERMANIUM;

EID: 25444493569 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.06.082 Document Type: Article

Times cited : (26)

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