Electronic structure and band offsets of lanthanide oxides

Topics in Applied Physics

Volumn 106, Issue , 2006, Pages 313-329

  Robertson, John ^a   Xiong, Ka ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33750817393     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/11499893_18     Document Type: Article

References (53)

1. G. D. Wilk, R. M. Wallace, J. M. Anthony: High-k gate dielectrics: Current status and materials properties considerations, J. Appl. Phys. 89, 5243 (2001) 313
2. 3 and related oxides, J. Appl. Phys. 93, 1054 (2003) 313
3. K. J. Hubbard, D. G. Schlom: Thermodynamic stability of binary oxides in contact with silicon, J. Mater. Res. 11, 2757 (1996) 313
4. J. Robertson: Band offsets of wide-band-gap oxides and implications for future electronic devices, J. Vac. Sci. Technol. B 18, 1785 (2000) 313, 314, 319, 323, 324
5. 3 gate dielectric with equivalent oxide thickness of 5 A, IEEE E. D. Lett. 21, 341 (2000) 313
6. H. Iwai, S. Ohmi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama, Y. Yoshihara: Advanced gate dielectric materials for sub-100 nm CMOS, Tech. Digest IEDM IEEE p. 625 (2002) 313
7. 3 and silicon, Appl. Phys. Lett. 84, 726 (2004) 313, 323
8. 3 for silicon, Appl. Phys. Lett. 77, 130 (2000) 313
9. 3, J. Appl. Phys. 89, 3920 (2001) 313
10. A. Fissel, J. Dabrowski, H. J. Osten: Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001), J. Appl. Phys. 91, 8986 (2002) 313, 318, 325
11. 3/Si(001) heterojunctions, Appl. Phys. Lett. 80, 297 (2002) 313, 323
12. 3 thin films fabricated by E-beam deposition method, J. Electrochem. Soc. 151, G279 (2004) 313
13. 3 thin film on GaAs(111), J. Vac. Sci. Technol. A 22, 594 (2004) 313
14. 3 gate dielectrics grown on Si with various pre-deposition treatments, J. Vac. Sci. Technol. B 22, 2121 (2004) 313
15. 3/silicon structures, Appl. Phys. Lett. 85, 5316 (2004) 313, 323
16. 3, Phys. Rev. Lett. 94, 027602 (2005) 313, 316
17. P. W. Peacock, J. Robertson: Band offsets and Schottky barrier heights of high dielectric constant oxides, J. Appl. Phys. 92, 4712 (2002) 315, 317, 319, 322
18. P. P. Rushton, D. J. Tozer, S. J. Clark: Nonlocal density-functional description of exchange and correlation in silicon, Phys. Rev. B 65, 235203 (2002) 316
19. M. Perego, G. Scarel: private communication 317
20. B. M. Bylander, L. Kleinman: Good semiconductor band gaps with a modified local-density approximation, Phys. Rev. B 41, 7868 (1990) 319
21. B. Kralik, E. K. Chang, S. G. Louie: Structural properties and quasiparticle band structure of zirconia, Phys. Rev. B 57, 7027 (1998) 319
22. 2 in fluorite phase, Microelectron. Reliab. 41, 1093 (2001) 319
23. J. Robertson, C. W. Chen: Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate, Appl. Phys. Lett. 74, 1168 (1999) 319
24. A. M. Cowley, S. M. Sze: Surface states and barrier height of metal-semiconductor systems, J. Appl. Phys. 36, 3212 (1965) 310, 320
25. W. Mönch: Metal-semiconductor contacts: Electronic properties, Surf. Sci. 299-300, 928 (1994) 319, 320
26. W. Mönch: Role of virtual gap states and defects in metal-semiconductor contacts, Phys. Rev. Lett. 58, 1260 (1987) 319, 321
27. M. Schluter: Chemical trends in metal-semiconductor barrier heights, Phys. Rev. B 17, 5044 (1978) 319
28. M. Schluter: Theoretical models of Schottky barriers, Thin Solid Films 93, 3 (1982) 319
29. J. Tersoff: Theory of semiconductor heterojunctions: The role of quantum dipoles, Phys. Rev. B 30, 4874 (1984) 319, 321
30. J. Tersoff: Schottky barriers and semiconductor band structures, Phys. Rev. B 32, 6968 (1985) 319, 321
31. M. Cardona, N. E. Christensen: Acoustic deformation potentials and heterostructure band offsets in semiconductors, Phys. Rev. B 35, 6182 (1987) 321
32. E. D. Palik: Handbook of Optical Properties of Solids, vol. 1-3 (Academic Press, San Diego 1985) 322
33. S. Miyazaki: Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics, J. Vac. Sci. Technol. B 19, 2212 (2001) 322, 323
34. 2/Si system, Appl. Phys. Lett. 80, 2135 (2002) 322, 323
35. G. B. Rayner Jr., D. Kang, Y. Zhang, G. Lucovsky: Nonlinear composition dependence of X-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films, J. Vac. Sci. Technol. B 20, 1748 (2002) 322, 323
36. W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim, Y. Di: Current transport in metal/hafnium oxide/silicon structure, IEEE E. D. Lett. 23, 97 (2002) 322
37. 2/Si, SiGe, and Ge interfaces, Appl. Phys. Lett. 85, 4418 (2004) 322
38. 2 interface by soft X-ray photoemission spectroscopy, Surf. Sci. 566, 526 (2004) 322
39. 2 thin films for gate insulators, Appl. Phys. Lett. 83, 2172 (2003) 322
40. Y.-C. Yeo, T.-J. King, C. Hu: Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology, J. Appl. Phys. 92, 7266 (2002) 323
41. 2 insulators, Appl. Phys. Lett. 78, 3073 (2001) 323
42. 2, J. Appl. Phys. 91, 3079 (2002) 323
43. T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai: Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer, Microelectron. Eng. 72, 283 (2004) 323
44. A. Ohta, M. Yamaoka, S. Miyazaki: Photoelectron spectroscopy of ultrathin yttrium oxide films on Si(100), Microelectron. Eng. 72, 154 (2004) 323
45. 3/Si(001), Appl. Phys. Lett. 77, 1662 (2000) 323
46. 3 gate oxide structures, Appl. Phys. Lett. 76, 2886 (2000) 323
47. D. J. DiMaria: Effects on interface barrier energies of metal-aluminum oxide-semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealing, J. Appl. Phys. 45, 5454 (1974) 323
48. A. Baldereschi, S. Baroni, R. Resta: Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs, Phys. Rev. Lett. 61, 734 (1988) 324
49. C. G. van de Walle: Band lineups and deformation potentials in the model-solid theory, Phys. Rev. B 39, 1871 (1989) 324
50. C. J. Forst, C. R. Ashman, K. Schwarz, P. E. Blöchl: The interface between silicon and a high-k oxide, Nature 427, 53 (2004) 325
51. 3-silicon interfaces, Appl. Phys. Lett. 83, 5497 (2003) 325
52. 2 gate oxide interfaces, Phys. Rev. Lett. 92, 057601 (2004) 325
53. J. Robertson: Interfaces and defects of high-k oxides on silicon, Solid State Electron. 49, 283 (2005) 325