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Volumn 2, Issue 2, 2006, Pages 197-219

Spin MOSFETs as a basis for spintronics

Author keywords

MOSFETs; Spin MOSFETs; Spin transistors; Spintronics

Indexed keywords

MOSFETS; POWER-DELAY PRODUCT; SPIN MOSFETS; SPIN TRANSISTORS; SPINTRONICS;

EID: 33747222409     PISSN: 15533077     EISSN: 15533093     Source Type: Journal    
DOI: 10.1145/1149976.1149980     Document Type: Article
Times cited : (44)

References (86)
  • 1
    • 0000516415 scopus 로고    scopus 로고
    • Spin-polarized current switching of a Co thin film nanomagnet
    • ALBERT, F. J., KATINE, J. A., BUHRMAN, R. A., AND RALPH, D. C. 2000. Spin-polarized current switching of a Co thin film nanomagnet. Appl. Phys. Lett. 77, 3809-3811.
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 3809-3811
    • Albert, F.J.1    Katine, J.A.2    Buhrman, R.A.3    Ralph, D.C.4
  • 4
    • 4644246250 scopus 로고    scopus 로고
    • Reexamination of some spintronic field-effect device concepts
    • BANDYOPADHYAY, S. AND CAHAY, M. 2004. Reexamination of some spintronic field-effect device concepts. Appl. Phys. Lett. 85, 1433-1435.
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 1433-1435
    • Bandyopadhyay, S.1    Cahay, M.2
  • 5
    • 0033204825 scopus 로고    scopus 로고
    • Current-perpendicular (CPP) magnetoresistance in magnetic metallic multilayers
    • BASS, J. AND PRATT, W. P., JR. 1999. Current-Perpendicular (CPP) magnetoresistance in magnetic metallic multilayers. J. Mag. Mag. Mater. 200, 274-289.
    • (1999) J. Mag. Mag. Mater. , vol.200 , pp. 274-289
    • Bass, J.1    Pratt Jr., W.P.2
  • 6
    • 0141942838 scopus 로고    scopus 로고
    • Reconfigurable computing systems
    • BONDALAPATI, K. AND PRASANNA, V. K. 2002. Reconfigurable computing systems. Proc. IEEE 20, 1201-1217.
    • (2002) Proc. IEEE , vol.20 , pp. 1201-1217
    • Bondalapati, K.1    Prasanna, V.K.2
  • 7
    • 37649027698 scopus 로고    scopus 로고
    • Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn) as tunnel function
    • CHIBA, D., SATO, Y., KITA, T., MATSUKURA, F., AND OHNO, H. 2004. Current-Driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn) as tunnel function. Phys. Rev. Lett. 93, 216602-1-216602-4.
    • (2004) Phys. Rev. Lett. , vol.93
    • Chiba, D.1    Sato, Y.2    Kita, T.3    Matsukura, F.4    Ohno, H.5
  • 8
    • 0041520973 scopus 로고    scopus 로고
    • Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor
    • CHIBA, D., YAMANOUCHI, M., MATSUKURA, F., AND OHNO, H. 2003. Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor. Science 301, 943-945.
    • (2003) Science , vol.301 , pp. 943-945
    • Chiba, D.1    Yamanouchi, M.2    Matsukura, F.3    Ohno, H.4
  • 10
    • 0037449321 scopus 로고    scopus 로고
    • Spin-dependent properties of a two-dimentional electron gas with ferromagnetic gates
    • CIUTI, C., MCGUIRE, J. P., AND SHAM, L. J. 2002. Spin-Dependent properties of a two-dimentional electron gas with ferromagnetic gates. Appl. Phys. Lett. 81, 4781-4783.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 4781-4783
    • Ciuti, C.1    Mcguire, J.P.2    Sham, L.J.3
  • 11
    • 0019527993 scopus 로고
    • Limitations on the performance of field-effect devices for logic applications
    • COOPER, J. A. JR. 1981. Limitations on the performance of field-effect devices for logic applications. Proc. IEEE 69, 226-231.
    • (1981) Proc. IEEE , vol.69 , pp. 226-231
    • Cooper Jr., J.A.1
  • 12
    • 1942449168 scopus 로고
    • Electronic analog of the electro-optic modulator
    • DATTA, S. AND DAS, B. 1990. Electronic analog of the electro-optic modulator. Appl. Phys. Lett. 56, 665-667.
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 665-667
    • Datta, S.1    Das, B.2
  • 13
    • 0000488553 scopus 로고    scopus 로고
    • Magnetic tunneling applied to memory
    • DAUGHTON, J. M. 1997. Magnetic tunneling applied to memory. J. Appl. Phys. 81, 3758-3763.
    • (1997) J. Appl. Phys. , vol.81 , pp. 3758-3763
    • Daughton, J.M.1
  • 14
    • 0037637569 scopus 로고    scopus 로고
    • Size dependence of switching thresholds for pseudo spin valve MRAM cells
    • DAUGHTON, J. M. AND POHM, A. V. 2003. Size dependence of switching thresholds for pseudo spin valve MRAM cells. J. Appl. Phys. 93, 7304-7306.
    • (2003) J. Appl. Phys. , vol.93 , pp. 7304-7306
    • Daughton, J.M.1    Pohm, A.V.2
  • 17
    • 0028761478 scopus 로고
    • Giant magnetoresistance in spin-valve multilayers
    • DIENY, B. 1994. Giant magnetoresistance in spin-valve multilayers. J. Mag. Mag. Mater. 136, 335-359.
    • (1994) J. Mag. Mag. Mater. , vol.136 , pp. 335-359
    • Dieny, B.1
  • 18
    • 0142154303 scopus 로고    scopus 로고
    • Ferromagnetic III-V and II-VI semiconductors
    • DIETL, T. AND OHNO, H. 2003. Ferromagnetic III-V and II-VI semiconductors. MRS Bulletin 28, 714-719.
    • (2003) MRS Bulletin , vol.28 , pp. 714-719
    • Dietl, T.1    Ohno, H.2
  • 20
    • 0037883691 scopus 로고    scopus 로고
    • Datta-Das transistor with enhanced spin control
    • EGUES, J. C., BURKARD, G., AND Loss, D. 2003. Datta-Das transistor with enhanced spin control. Appl. Phys. Lett. 82, 2658-2660.
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 2658-2660
    • Egues, J.C.1    Burkard, G.2    Loss, D.3
  • 21
    • 2142698676 scopus 로고    scopus 로고
    • Spin-polarized current amplification and spin injection in magnetic bipolar transistors
    • FABIAN, J. AND ZUTIC, I. 2004. Spin-Polarized current amplification and spin injection in magnetic bipolar transistors. Phys. Rev. B69, 11534-1-11534-13.
    • (2004) Phys. Rev. , vol.B69
    • Fabian, J.1    Zutic, I.2
  • 25
    • 0034890508 scopus 로고    scopus 로고
    • Ballistic spin-filter transistor
    • GRUNDLER, D. 2001. Ballistic spin-filter transistor. Phys. Rev. B63, 161307-1-161307-4.
    • (2001) Phys. Rev. B , vol.63
    • Grundler, D.1
  • 27
    • 0006063431 scopus 로고
    • A new type of tunnel-effect transistor employing internal field emission of Schottky barrier junction
    • HATTORI, R., NAKANE, A., AND SHIRAPUJI, J. 1992. A new type of tunnel-effect transistor employing internal field emission of Schottky barrier junction. Jpn. J. Appl. Phys. 31, L1467-L1469.
    • (1992) Jpn. J. Appl. Phys. , vol.31
    • Hattori, R.1    Nakane, A.2    Shirapuji, J.3
  • 28
    • 0028192851 scopus 로고
    • Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction
    • HATTOHI, R. AND SHIRAFUJI, J. 1994. Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction. Jpn. J. Appl. Phys. 33, 612-618.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 612-618
    • Hattohi, R.1    Shirafuji, J.2
  • 29
    • 0000950606 scopus 로고    scopus 로고
    • The roles of FPGAs in reprogrammable systems
    • HAUCK, S. 1998. The roles of FPGAs in reprogrammable systems. Proc. IEEE 86, 615-618.
    • (1998) Proc. IEEE , vol.86 , pp. 615-618
    • Hauck, S.1
  • 31
    • 0035366521 scopus 로고    scopus 로고
    • Present and future of magnetic RAM technology
    • INOMATA, K. 2001. Present and future of magnetic RAM technology. IEICE Trans. Electron. E84-C, 740-746.
    • (2001) IEICE Trans. Electron. , vol.E84-C , pp. 740-746
    • Inomata, K.1
  • 32
    • 0033100138 scopus 로고    scopus 로고
    • CMOS technology year 2010 and beyond
    • IWAI, H. 1999. CMOS technology Year 2010 and beyond. IEEE J. Solid State Circuits 34, 357-366.
    • (1999) IEEE J. Solid State Circuits , vol.34 , pp. 357-366
    • Iwai, H.1
  • 33
    • 0142039865 scopus 로고    scopus 로고
    • The spin-valve transistor: A review and outlook
    • JANSEN, R. 2003. The spin-valve transistor: A review and outlook. J. Phys. D: Appl. Phys. 36, R289-R308.
    • (2003) J. Phys. D: Appl. Phys. , vol.36
    • Jansen, R.1
  • 34
    • 2942546159 scopus 로고    scopus 로고
    • Substantial reduction of critical current for magnetization switching in an exchangebiased spin valve
    • JIANG, Y., NOZAKI, T., ABE, S., OCHIAI, T., HIROHATA, A., TEZUKA, N., AND INOMATA, K. 2004. Substantial reduction of critical current for magnetization switching in an exchangebiased spin valve. Nature Materials 3, 361-364.
    • (2004) Nature Materials , vol.3 , pp. 361-364
    • Jiang, Y.1    Nozaki, T.2    Abe, S.3    Ochiai, T.4    Hirohata, A.5    Tezuka, N.6    Inomata, K.7
  • 35
    • 4243114883 scopus 로고
    • Spin accumulation in gold-films
    • JOHNSON, M. 1993. Spin accumulation in gold-films. Phys. Rev. Lett. 70, 2142-2145.
    • (1993) Phys. Rev. Lett. , vol.70 , pp. 2142-2145
    • Johnson, M.1
  • 36
    • 0006902404 scopus 로고
    • Bipolar spin switch
    • JOHNSON, M. 1993. Bipolar spin switch. Science 260, 320-323.
    • (1993) Science , vol.260 , pp. 320-323
    • Johnson, M.1
  • 37
    • 0028429571 scopus 로고
    • The all-metal spin transistor
    • JOHNSON, M. 1994. The all-metal spin transistor. IEEE Spectrum 31, 47-51.
    • (1994) IEEE Spectrum , vol.31 , pp. 47-51
    • Johnson, M.1
  • 38
    • 0030349580 scopus 로고    scopus 로고
    • The bipolar spin transistor
    • JOHNSON, M. 1996. The bipolar spin transistor. Nonotechnology 7, 390-396.
    • (1996) Nonotechnology , vol.7 , pp. 390-396
    • Johnson, M.1
  • 39
    • 20244387000 scopus 로고    scopus 로고
    • Giant magnetoresistive random-access memories based on current-in-plane devices
    • KATTI, R. R. 2003. Giant magnetoresistive random-access memories based on current-in-plane devices. Proc. IEEE 91, 687-702.
    • (2003) Proc. IEEE , vol.91 , pp. 687-702
    • Katti, R.R.1
  • 41
    • 84939180950 scopus 로고
    • SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
    • LEPSELTER, T. AND SZE, S. M. 1968. SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain. Proc. IEEE 56, 1400-1402.
    • (1968) Proc. IEEE , vol.56 , pp. 1400-1402
    • Lepselter, T.1    Sze, S.M.2
  • 42
    • 20844458392 scopus 로고    scopus 로고
    • Ferromagnetic percolation in MnxGel-x dilute magnetic semiconductor
    • LI, A. P., SHEN, J., THOMPSON, J. R., AND WEITERING, H. H. 2005. Ferromagnetic percolation in MnxGel-x dilute magnetic semiconductor. Appl. Phys. Lett. 86.
    • (2005) Appl. Phys. Lett. , vol.86
    • Li, A.P.1    Shen, J.2    Thompson, J.R.3    Weitering, H.H.4
  • 44
    • 9144237206 scopus 로고    scopus 로고
    • Novel reconfigurable logic gates using spin metal-oxide-semiconductor field-effect transistors
    • MATSUNO, T., SUGAHARA, S., AND TANAKA, M. 2004. Novel reconfigurable logic gates using spin metal-oxide-semiconductor field-effect transistors. Jpn. J. Appl. Phys, 43, 6032-6037.
    • (2004) Jpn. J. Appl. Phys , vol.43 , pp. 6032-6037
    • Matsuno, T.1    Sugahara, S.2    Tanaka, M.3
  • 45
    • 2942666108 scopus 로고    scopus 로고
    • Silicon inversion layer with a ferromagnetic gate: A novel spin source
    • MCGUIRE, J. P., CIUTI, C., AND SHAM, L. J. 2004. Silicon inversion layer with a ferromagnetic gate: A novel spin source. J. Appl. Phys. 95, 6625-6629.
    • (2004) J. Appl. Phys. , vol.95 , pp. 6625-6629
    • Mcguire, J.P.1    Ciuti, C.2    Sham, L.J.3
  • 46
    • 0031223818 scopus 로고    scopus 로고
    • Energy-dependent hot electron-transport across a spin-valve
    • MIZUSHIMA, K., KINO, T., YAMAGUCHI, T., AND TANAKA, K. 1997. Energy-Dependent hot electron-transport across a spin-valve. IEEE Trans. Magnetics 33, 3500-3504.
    • (1997) IEEE Trans. Magnetics , vol.33 , pp. 3500-3504
    • Mizushima, K.1    Kino, T.2    Yamaguchi, T.3    Tanaka, K.4
  • 47
    • 0000947277 scopus 로고
    • Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor
    • MONSMA, D. J., LODDER, J. C., POPMA, TH. J. A., AND DIENY, B. 1995. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor. Phys. Rev. Lett. 74, 5260-5263.
    • (1995) Phys. Rev. Lett. , vol.74 , pp. 5260-5263
    • Monsma, D.J.1    Lodder, J.C.2    Popma, Th.J.A.3    Dieny, B.4
  • 48
    • 0033204012 scopus 로고    scopus 로고
    • Spin polarized tunneling in ferromagnetic junctions
    • MOODERA, J. S. AND MATRON, G. 1999. Spin polarized tunneling in ferromagnetic junctions. J. Mag. Mag. Mater. 200, 248-273.
    • (1999) J. Mag. Mag. Mater. , vol.200 , pp. 248-273
    • Moodera, J.S.1    Matron, G.2
  • 49
    • 4243181418 scopus 로고    scopus 로고
    • Current-induced magnetization reversal in a (Ga,Mn) as-based magnetic tunnel junction
    • MORIYA, R., HAMAYA, K., OIWA, A., AND MUNEKATA, H. 2004. Current-Induced magnetization reversal in a (Ga,Mn) As-Based magnetic tunnel junction. Jpn. Appl. Phys. 43, L825-L827.
    • (2004) Jpn. Appl. Phys. , vol.43
    • Moriya, R.1    Hamaya, K.2    Oiwa, A.3    Munekata, H.4
  • 51
    • 17744372673 scopus 로고    scopus 로고
    • Ferromagnetic semiconductor heterostructures
    • OHNO, H. 2004. Ferromagnetic semiconductor heterostructures. J. Mag. Mag. Mater. 272-276, 1-6.
    • (2004) J. Mag. Mag. Mater. , vol.272-276 , pp. 1-6
    • Ohno, H.1
  • 55
    • 0032573499 scopus 로고    scopus 로고
    • Magnetoelectronics
    • PRINZ, G. 1998. Magnetoelectronics. Science 282, 1660-1663.
    • (1998) Science , vol.282 , pp. 1660-1663
    • Prinz, G.1
  • 57
    • 0036532154 scopus 로고    scopus 로고
    • First principles materials design for semiconductor spintronics
    • SATO, K. AND KATAYAMA-YOSHIDA, H. 2002. First principles materials design for semiconductor spintronics. Semicond. Sci. Technol. 17, 367-376.
    • (2002) Semicond. Sci. Technol. , vol.17 , pp. 367-376
    • Sato, K.1    Katayama-Yoshida, H.2
  • 58
    • 0033310835 scopus 로고    scopus 로고
    • Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate
    • SAITO, W., ITOH, A., YAMAGAMI, S., AND ASADA, M. 1999. Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate. Jpn. J. Appl. Phys. 38, 6226-6231.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 6226-6231
    • Saito, W.1    Itoh, A.2    Yamagami, S.3    Asada, M.4
  • 60
    • 0022777999 scopus 로고
    • 2 predicted as a half-metallic ferromagnet
    • 2 predicted as a half-metallic ferromagnet. J. Phys. F 16, L211-L215.
    • (1986) J. Phys. F , vol.16
    • Schwarz, K.1
  • 61
    • 27944492851 scopus 로고
    • A functional MOS-transistor featuring gate-level weighted sum and threshold operations
    • SHIBATA, T. AND OHMI, T. 1992. A functional MOS-transistor featuring gate-level weighted sum and threshold operations. IEEE Trans. Electron Devices ED-39, 1444-1455.
    • (1992) IEEE Trans. Electron Devices , vol.ED-39 , pp. 1444-1455
    • Shibata, T.1    Ohmi, T.2
  • 62
    • 0027556074 scopus 로고
    • Neutron MOS-binary-logic integrated circuits-part I: Design fundamentals and soft-hardware-logic circuit implementation
    • SHIBATA, T. AND OHMI, T. 1993. Neutron MOS-binary-logic integrated circuits-part I: Design fundamentals and soft-hardware-logic circuit implementation. IEEE Trans. Electron Devices ED-40, 570-576.
    • (1993) IEEE Trans. Electron Devices , vol.ED-40 , pp. 570-576
    • Shibata, T.1    Ohmi, T.2
  • 63
    • 0035334102 scopus 로고    scopus 로고
    • Electronic and magnetic properties of 3d transition-metal-doped GaAs
    • SHIRAI, M. 2001. Electronic and magnetic properties of 3d transition-metal-doped GaAs. Physica E 10, 143-147.
    • (2001) Physica E , vol.10 , pp. 143-147
    • Shirai, M.1
  • 64
    • 0038047713 scopus 로고    scopus 로고
    • Possible half-metallic ferromagnetism in zinc blende CrSb and CrAs
    • SHIRAI, M. 2003. Possible half-metallic ferromagnetism in zinc blende CrSb and CrAs. J. Appl. Phys. 93, 6844-6846.
    • (2003) J. Appl. Phys. , vol.93 , pp. 6844-6846
    • Shirai, M.1
  • 65
    • 0030174367 scopus 로고    scopus 로고
    • Current-driven excitation of magnetic multilayers
    • SLONCZEWSKI, J. C. 1996. Current-driven excitation of magnetic multilayers. J. Mag. Mag. Mater. 159, L1-L7.
    • (1996) J. Mag. Mag. Mater. , vol.159
    • Slonczewski, J.C.1
  • 66
    • 1942445579 scopus 로고    scopus 로고
    • Electronic structure and ferromagnetism of Mn-doped group-IV semiconductors
    • STROPPA, A., PICOZZI, S., CONTINENZA, A., AND FREEMAN, A. J. 2003. Electronic structure and ferromagnetism of Mn-doped group-IV semiconductors. Phys. Rev. B 68, 155203-1-155203-9.
    • (2003) Phys. Rev. B , vol.68
    • Stroppa, A.1    Picozzi, S.2    Continenza, A.3    Freeman, A.J.4
  • 67
    • 2142649268 scopus 로고    scopus 로고
    • A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
    • SUGAHARA, S. AND TANAKA, M. 2004. A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84, 2307-2309.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 2307-2309
    • Sugahara, S.1    Tanaka, M.2
  • 68
    • 20944431559 scopus 로고    scopus 로고
    • A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel
    • SUGAHARA, S. AND TANAKA, M. 2005. A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel. J. Appl. Phys. 97.
    • (2005) J. Appl. Phys. , vol.97
    • Sugahara, S.1    Tanaka, M.2
  • 69
    • 25844486441 scopus 로고    scopus 로고
    • Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics
    • SUGAHARA, S. 2005. Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics. IEEE Proc. Circuits Devices Syst. 152, 355-365.
    • (2005) IEEE Proc. Circuits Devices Syst. , vol.152 , pp. 355-365
    • Sugahara, S.1
  • 70
    • 31844431595 scopus 로고    scopus 로고
    • Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films
    • SUGAHARA, S., LEE, K. L., YADA, S., AND TANAKA, M. 2005. Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-Doped Ge thin films. Jpn. J. Appl. Phys. 48, L1426-L1429.
    • (2005) Jpn. J. Appl. Phys. , vol.48
    • Sugahara, S.1    Lee, K.L.2    Yada, S.3    Tanaka, M.4
  • 74
    • 0036581882 scopus 로고    scopus 로고
    • Subband structure engineering for realizing scaled CMOS with high performance and low power consumption
    • TAKAGI, S. 2002. Subband structure engineering for realizing scaled CMOS with high performance and low power consumption. IEICE Trans. Electron. E85-C, 1604-1072.
    • (2002) IEICE Trans. Electron. , vol.E85-C , pp. 1604-11072
    • Takagi, S.1
  • 77
    • 0027623456 scopus 로고
    • A reprogrammable gate arrray and applications
    • TRIMBERGER, S. 1993. A reprogrammable gate arrray and applications. Proc. IEEE 81, 1030-1041.
    • (1993) Proc. IEEE , vol.81 , pp. 1030-1041
    • Trimberger, S.1
  • 78
    • 6244304433 scopus 로고
    • Tunneling in a finite superlattice
    • TSU, R. AND ESAKI, L. 1973. Tunneling in a finite superlattice. Appl. Phys. Lett. 22, 562-564.
    • (1973) Appl. Phys. Lett. , vol.22 , pp. 562-564
    • Tsu, R.1    Esaki, L.2
  • 80
    • 79956016569 scopus 로고    scopus 로고
    • Room temperature operation of a high output current magnetic tunnel transistor
    • VAN DIJKEN, S., JIANG, X., AND PARKIN, S. S. P. 2002. Room temperature operation of a high output current magnetic tunnel transistor. Appl. Phys. Lett. 80, 3364-3366.
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 3364-3366
    • Van Dijken, S.1    Jiang, X.2    Parkin, S.S.P.3
  • 81
    • 0042378356 scopus 로고    scopus 로고
    • Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers
    • VAN DIJKEN, S., JIANG, X., AND PARKIN, S. S. P. 2003. Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers. Appl. Phys, Lett. 83, 951-952.
    • (2003) Appl. Phys, Lett. , vol.83 , pp. 951-952
    • Van Dijken, S.1    Jiang, X.2    Parkin, S.S.P.3
  • 83
    • 4444233280 scopus 로고    scopus 로고
    • 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers
    • WANG, D., NORDMAN, C., DAUGHTON, J. M., QIAN, Z., AND FINK, J. 2004. 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers. IEEE Trans. Magnetics 40, 2269-2271.
    • (2004) IEEE Trans. Magnetics , vol.40 , pp. 2269-2271
    • Wang, D.1    Nordman, C.2    Daughton, J.M.3    Qian, Z.4    Fink, J.5
  • 86
    • 2942610744 scopus 로고    scopus 로고
    • Spintronics: Fundamentals and applications
    • ZUTIC, I., FABIAN, J., AND DAS SARMA, S. 2004. Spintronics: Fundamentals and applications. Rev. Modern Phys. 76, 323-410.
    • (2004) Rev. Modern Phys. , vol.76 , pp. 323-410
    • Zutic, I.1    Fabian, J.2    Das Sarma, S.3


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