SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 10, 2005, Pages

A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel

(2) Sugahara, Satoshi a,b Tanaka, Masaaki a,b

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-INDUCED MAGNETIZATION REVERSAL (CIMR); FERROMAGNETIC SEMICONDUCTORS (FS); PROGRAMMING CURRENTS; SCHOTTKKY JUNCTIONS;

ENERGY DISSIPATION; FERROMAGNETIC MATERIALS; MAGNETIC LOGIC DEVICES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; SCHOTTKY BARRIER DIODES; TUNNEL JUNCTIONS;

MOSFET DEVICES;

EID: 20944431559 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1852280 Document Type: Conference Paper

Times cited : (63)

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