Magneto-optical properties of group-IV ferromagnetic semiconductor Ge 1-x Fex grown by low-temperature molecular beam epitaxy

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Shuto, Yusuke ^a   Tanaka, Masaaki ^a,b   Sugahara, Satoshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; INTERMETALLICS; MOLECULAR BEAM EPITAXY; SUPERCONDUCTING TRANSITION TEMPERATURE;

GROUP-IV FERROMAGNETIC SEMICONDUCTOR GE 1-X FEX; LOW-TEMPERATURE MOLECULAR BEAM EPITAXY; MAGNETIC CIRCULAR DICHROISM (MCD);

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 33646729243     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2172909     Document Type: Article

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