Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction

Physical Review Letters

Volumn 93, Issue 21, 2004, Pages

  Chiba, D ^a,b   Sato, Y ^a   Kita, T ^a,b   Matsukura, F ^a,b   Ohno, H ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC SEMICONDUCTORS; GIANT MAGNETORESISTANCE (GMR); SPIN POLARIZATION; TUNNEL MAGNETORESISTANCE (TMR);

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); ELECTRIC POTENTIAL; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; TORQUE;

TUNNEL JUNCTIONS;

EID: 37649027698     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.216602     Document Type: Article

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