Spin polarized tunneling in ferromagnetic junctions

Journal of Magnetism and Magnetic Materials

Volumn 200, Issue 1-3, 1999, Pages 248-273

  Moodera, Jagadeesh S ^a   Mathon, George ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b CITY UNIVERSITY   (United Kingdom)

Author keywords

Magnetic tunnel junctions; Magnetoresistance; Spin polarization; Tunneling

Indexed keywords

ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; FERROMAGNETISM; INTERFACES (MATERIALS); MAGNETIC DEVICES; MAGNETIC STORAGE; MAGNETISM; MAGNETORESISTANCE; SPIN POLARIZATION; TUNNEL JUNCTIONS; CHEMICAL ANALYSIS; FERMI LEVEL; MAGNETIC FILMS; MAGNETIC HEADS; MAGNETIC PROPERTIES; TEMPERATURE;

FERROMAGNETIC JUNCTIONS; FUNDAMENTAL PHYSICS; INELASTIC TUNNELING PROCESS; LINEAR-RESPONSE THEORY; MAGNETIC TUNNEL JUNCTION; QUANTITATIVE MODELING; REPEATABLE RESULTS; SPIN-POLARIZED TUNNELING; MAGNETIC MEMORY ELEMENTS; PICOTESLA FIELD SENSORS; SPIN POLARIZED TUNNELING; TEDROW-MERSERVEY MODEL; ZEEMAN SPLIT QUASI PARTICLE;

TUNNELLING MAGNETORESISTANCE; TUNNEL JUNCTIONS;

EID: 0033204012     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(99)00515-6     Document Type: Article

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