SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6226-6231

Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate

(4) Saitoh, Wataru a Itoh, Atsushi a Yamagami, Shigeharu a Asada, Masahiro a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM COMPOUNDS; GATES (TRANSISTOR); ION IMPLANTATION; OXYGEN; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

ERBIUM SILICIDE; SEPARATION BY IMPLANTED OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0033310835 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.6226 Document Type: Article

Times cited : (92)

References (19)

1
- 36449006867
- J.R.Tucker,C.WangandP.S.CameyAppl.Phys.Lett.65(1994)618.
- (1994) , vol.65 , pp. 618
- Tucker, J.R.¹ Wangand, C.² Cameyappl, P.S.³

2
- 0028192851
- R. Hattori and J. Shirafuji: Jpn. J. Appl. Phys. 33 (1994) 612.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 612
- Hattori, R.¹ Shirafuji, J.²

3
- 0039967805
- C.-K. Huane, \V. E. Zhang and C. H. YangIEEE Trans. Electron Devices 45 (1998) 842.
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 842
- Huane, C.-K.¹ Zhang, E.² Yang, C.H.³

4
- 51149208592
- J. P. Snydcr, C. R. Helms and Y. NishiAppl. Phys. Lett. 67 (1995) 1420.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1420
- Snydcr, J.P.¹ Helms, C.R.² Nishi, Y.³

5
- 0032314906
- C. Wang, J. P. Snyder and J. R. Tucker56th Device Research Conf. Dig. (1998) p. 72.
- (1998) 56th Device Research Conf. Dig. , pp. 72
- Wang, C.¹ Snyder, J.P.² Tucker, J.R.³

6
- 33847554603
- J. C. Hu, H. Yang, R. Kraft, A. L. P. Rotondaro, S. Hattangady, W. W Lee, R. A. Chapman, C.-P. Chao, A. Chatterjee, M. Hanratty, M. Rodder and I.-C. ChenDM Tech. Dig. (1997) p. 825.
- (1997) DM Tech. Dig. , pp. 825
- Hu, J.C.¹ Yang, H.² Kraft, R.³ Rotondaro, A.L.P.⁴ Hattangady, S.⁵ Lee, W.W.⁶ Chapman, R.A.⁷ Chao, C.-P.⁸ Chatterjee, A.⁹ Hanratty, M.¹⁰ Rodder, M.¹¹ Chen, I.-C.¹²

7
- 0031273760
- H. Shimada, Y. Hirano, T. Ushiki, K. Ino and T. OhmiIEEE Trans. Electron Devices 44 (1997) 1903.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1903
- Shimada, H.¹ Hirano, Y.² Ushiki, T.³ Ino, K.⁴ Ohmi, T.⁵

8
- 0001062092
- F. A. Padovani and R. SiraltonSolid-State Electron. 9 (1966) 695.
- (1966) Solid-State Electron. , vol.9 , pp. 695
- Padovani, F.A.¹ Siralton, R.²

9
- 79960641896
- Wiley, New York 2nd ed.
- S. M. SzcPhysics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed.
- (1981) Physics of Semiconductor Devices
- Szc, S.M.¹

10
- 0028416842
- J. Wang, N. Kistler, J. Woo and C. R. ViswanathanIEEE Electron Device Lett. 15(1994)117.
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 117
- Wang, J.¹ Kistler, N.² Woo, J.³ Viswanathan, C.R.⁴

11
- 0028758516
- ) F. Assaderaghi, D. Sinitsky, H. Gaw, J. Bokor, P. K. Ko and C. HuIEEE IEDM Tech" Dig. (1994) p. 479.
- (1994) IEEE IEDM Tech" Dig. , pp. 479
- Assaderaghi, F.¹ Sinitsky, D.² Gaw, H.³ Bokor, J.⁴ Ko, P.K.⁵ Hu, C.⁶

12
- 84886448057
- F. Assaderaghi, W. Rausch, A. Ajimera, E. Leobandung, D. Schcpis, L. Wagner, H.-J. Wann, R. Bolam, D. Yce, B. Davari and G. ShahidiIEEE, IEDM Tech. Dig. (1997) p. 415.
- (1997) , pp. 415
- Assaderaghi, F.¹ Rausch, W.² Ajimera, A.³ Leobandung, E.⁴ Schcpis, D.⁵ Wagner, L.⁶ Wann, H.-J.⁷ Bolam, R.⁸ Yce, D.⁹ Davari, B.¹⁰ Shahidiieee, G.¹¹ Dig, I.T.¹²

13
- 0028448562
- C. Fiegna, H. Iwai, T. Wada, M. Saitoh, E. Sangiorgi and B. RiccoIEEE Trans. Electron Devices 41 (1994) 941.
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 941
- Fiegna, C.¹ Iwai, H.² Wada, T.³ Saitoh, M.⁴ Sangiorgi, E.⁵ Ricco, B.⁶

14
- 36449008163
- A. Tanabe, K. Konuma, N. Tcranishi, S. Tohyama and K. MasubuchiJ.AppI.Phys. 69(1991)850.
- (1991) J.AppI.Phys. , vol.69 , pp. 850
- Tanabe, A.¹ Konuma, K.² Tcranishi, N.³ Tohyama, S.⁴ Masubuchi, K.⁵

15
- 0032096170
- D. Wörle, H. Griinleitncr, V. Demulh, C. Kumpf, H. P. Strunk, E. Burkel and M. SchulzAppl. Phys. A 66 (1998) 629.
- (1998) Appl. Phys. A , vol.66 , pp. 629
- Wörle, D.¹ Griinleitncr, H.² Demulh, V.³ Kumpf, C.⁴ Strunk, H.P.⁵ Burkel, E.⁶ Schulz, M.⁷

16
- 0000754750
- M. Nishisaka and T. AsanoJpn. J. Appl. Phys. 37 (1998) 1295.
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1295
- Nishisaka, M.¹ Asano, T.²

17
- 0031548439
- J. Kojima, S. Zaima, H. Shinoda, H. Iwano, H. Ikeda and Y. YasudaAppl. Surf. Sei. 117/118 (1997) 317.
- (1997) Appl. Surf. Sei. , vol.117-118 , pp. 317
- Kojima, J.¹ Zaima, S.² Shinoda, H.³ Iwano, H.⁴ Ikeda, H.⁵ Yasuda, Y.⁶

18
- 0028092517
- S. P. Ashburn, D. T. Grider, M. C, Öztürk, G. Harris and D. M. MäherMater. Res. Soc. Symp. Proc. 320 (1994) 311.
- (1994) Mater. Res. Soc. Symp. Proc. , vol.320 , pp. 311
- Ashburn, S.P.¹ Grider, D.T.² Öztürk, M.C.³ Harris, G.⁴ Mäher, D.M.⁵

19
- 0000382265
- H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto and T. IkomaAppl. Phys. Lett. 68 (1996) 3585.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3585
- Ishikuro, H.¹ Fujii, T.² Saraya, T.³ Hashiguchi, G.⁴ Hiramoto, T.⁵ Ikoma, T.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.