Comparison of Fe/Schottky and Fe/Al 2O 3 tunnel barrier contacts for electrical spin injection into GaAs

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4334-4336

  Van 'T Erve, O M J ^a   Kioseoglou, G ^a   Hanbicki, A T ^a   Li, C H ^a   Jonker, B T ^a   Mallory, R ^b   Yasar, M ^b   Petrou, A ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FARADAY GEOMETRY; TUNNEL BARRIERS; ZERO-BIAS ANOMALIES (ZBA); ZERO-BIAS RESISTANCE (ZBR);

ALUMINA; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); IRON; LIGHT EMITTING DIODES; MAGNETIZATION; MOLECULAR BEAM EPITAXY; OXIDATION; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ELECTRIC CONTACTS;

EID: 2942685554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758305     Document Type: Article

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17. 3 barrier might be quite different, resulting in a difference in energy for the injected elections.