Design of curie point written magnetoresistance random access memory cells

Journal of Applied Physics

Volumn 93, Issue 10 2, 2003, Pages 7304-7306

  Daughton, J M ^a   Pohm, A V ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FERROMAGNETISM; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MAGNETORESISTANCE; THERMODYNAMIC STABILITY;

FERROMAGNETIC FILMS;

RANDOM ACCESS STORAGE;

EID: 0037637569     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1557373     Document Type: Conference Paper

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