70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2269-2271

  Wang, Dexin ^a   Nordman, Cathy ^a   Daughton, James M ^a   Qian, Zhenghong ^a   Fink, Jonathon ^a  

^a NVE CORPORATION   (United States)

Author keywords

Amorphous CoFeB; Magnetic sensor; MTJ; Nanomagnetics; Nanotechnology; Raagnetoresisitance; Spin dependent tunneling (SDT)

Indexed keywords

ALUMINA; ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; DEPOSITION; HIGH RESOLUTION ELECTRON MICROSCOPY; MAGNETIC FIELDS; MAGNETORESISTANCE; MAGNETRON SPUTTERING; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS COFEB; MAGNETIC SENSORS; MTJ; NANOMAGNETICS; SPIN-DEPENDENT TUNNELING (SDT);

TUNNELING MACHINES;

EID: 4444233280     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.830219     Document Type: Article

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