Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Moriya, Rai ^a   Hamaya, Kohei ^a   Oiwa, Akira ^b   Munekata, Hiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

(Ga,Mn)As; III V magnetic alloy semiconductors; Magnetic tunnel junction; MBE; Spintronics

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; FERRIMAGNETISM; ION BEAMS; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS;

FOCUSED ION BEAMS (FIB); MAGNETIC ALLOYS SEMICONDUCTORS; MAGNETIC TUNNEL JUNCTIONS (MTJ); SPINTRONICS;

TUNNEL JUNCTIONS;

EID: 4243181418     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l825     Document Type: Article

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