Magnetic bipolar transistor

Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 85-87

  Fabian, Jaroslav ^a   Žutić, Igor ^b   Das Sarma, S ^b  

^a UNIVERSITY OF GRAZ   (Austria)

^b Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TUNNEL JUNCTIONS; CARRIER RECOMBINATION; SPIN POLARIZATION;

AMPLIFICATION; CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; FERROMAGNETISM; JUNCTION GATE FIELD EFFECT TRANSISTORS; MAGNETIC FIELD EFFECTS; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE MEASUREMENT;

BIPOLAR TRANSISTORS;

EID: 0942278273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637954     Document Type: Article

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