Giant magnetoresistive random-access memories based on current-in-plane devices

Proceedings of the IEEE

Volumn 91, Issue 5, 2003, Pages 687-702

  Katti, Romney R ^a,b,c,d,e  

^a IEEE   (United States)

^b HONEYWELL   (United States)

^c AMERICAN PHYSICAL SOCIETY   (United States)

^d Tau Beta Pi   (United States)

^e Sigma Xi   (United States)

Author keywords

Giant magnetoresistance; Giant magnetoresistive random access memory (GMRAM); Magnetic multilayers; Magnetic switching; Micromagnetic modeling; Pseudo spin valve (PSV) devices; Spin valve (SV) devices; Switching Astroid

Indexed keywords

COMPUTER SIMULATION; GIANT MAGNETORESISTANCE; MAGNETIZATION; MULTILAYERS; SEMICONDUCTOR DEVICES; SWITCHING; TUNNEL JUNCTIONS;

GIANT MAGNETORESISTIVE RANDOM ACCESS MEMORY (GMRAM); MAGNETIC MULTILAYERS; MAGNETIC SWITCHING; MICROMAGNETIC MODELING; PSEUDO-SPIN-VALVE (PSV) DEVICES; SPIN-VALVE (SV) DEVICES; SWITCHING ASTROID;

RANDOM ACCESS STORAGE;

EID: 20244387000     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2003.811805     Document Type: Article

References (23)

1. R. R. Katti, "Current-in-plane pseudo-spin-valve device performance for giant magnetoresistive random access memory applications," J. Appl, Phys., vol. 91, no. 10, pp. 7245-7250, May 2002.
2. R. Katti, A. Arrott, J. Drewes, W. Larson, H. Liu, Y. Lu, T. Vogt, and T. Zhu, "Pseudo-spin-valve device performance for giant magnetoresistive random access memory applications," IEEE Trans. Magn., vol. 37, pp. 1967-1969, July 2001.
3. R. Katti and T. Zhu, "Attractive magnetic memories," IEEE Circuits Devices Mag., vol. 17, pp. 26-34, Mar. 2001.
4. J. Gadbois, J.-G. Zhu, W. Vavra, and A. Hurst, "The effect of end and edge shape on the performance of pseudo-spin valve memories," IEEE Trans. Magn., vol. 34, pp. 1066-1068, July 1998.
5. J. Shi, T. Zhu, M. Durlam, E. Chen, S. Tehrani, Y. Zheng, and J. Zhu, "End domain states and magnetization reversal in submicron magnetic structures," IEEE Trans. Magn., vol. 34, pp. 997-999, July 1998.
6. E. Y. Chen, S. Tehrani, T. Zhu, M. Durlam, and H. Goronkin, "Sub-micron spin valve magnetoresistive random access memory cell," J. Appl. Phys., vol. 81, no. 8, pp. 3992-3997, Apr. 1997.
7. S. Tehrani, J. M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. DeHerrera, "Progress and outlook for MRAM technology," IEEE Trans. Magn., vol. 35, pp. 2814-2819, Sept. 1999.
8. H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, J. De Boeck, R. Sousa, L. Melo, and P. Freitas, "Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures," IEEE Trans. Magn., vol. 35, pp. 2820-2825, Sept. 1999.
9. M. Johnson, "Magnetoelectronic memories last and last," IEEE Spectr., vol. 37, pp. 33-40, Feb. 2000.
10. G. Prinz, "Hybrid ferromagnet semiconductor devices," Science, vol. 250, pp. 1092-1097, 1990.
11. S. Tehrani, E. Chen, M. Durlam, M. DeHerrera, J. M. Slaughter, J. Shi, and G. Kerszykowski, "High-density submicron magnetoresistive random access memory," J. Appl. Phys., vol. 85, no. 8, pp. 5822-5827, Apr. 1999.
12. R. R. Katti, "Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers," J. Appl. Phys., to be published.
13. M. Scheinfein, LLG Micromagnetics Simulator, Version 1.45, M. Scheinfein Co., Hillsboro, OR, 1998.
14. Applications of Magnetism. New York: Wiley, 1980.
15. E. C. Stoner and E. P. Wohlfarth, "A mechanism of magnetic hysteresis in heterogeneous alloys," Philos. Trans. R. Soc. London A, Math. Phys. Sci., vol. A240, pp. 599-642, 1948.
16. C. D. Mee and E. D. Daniel, Magnetic Recording Volume I: Technology. New York: McGraw-Hill, 1987.
17. D. Jiles, Introduction to Magnetism and Magnetic Materials. London, U.K.: Chapman & Hall, 1991.
18. S. Chikazumi and S. Charap, Physics of Magnetism. Malabar, Florida: Krieger, 1984.
19. R. C. O'Handley, Modern Magnetic Materials: Principles and Applications. New York: Wiley, 2000.
20. Proc. Spins/Spintronics Review, a DARPA-Sponsored Program, S. Wolf and D. Treger, Eds., Long Beach, CA, Sept. 3-7, 2001.
21. Proc. Spins/Spintronics Review, a DARPA-Sponsored Program, S. Wolf and D. Treger, Eds., Delray Beach, FL, Sept. 30-Oct. 4 2002.
22. D. Talbot, "Computing's new spin," Technol. Rev., p. 39, Jan./Feb. 2001.
23. R. R. Katti, D. Zou, D. Reed, and H. Kaakani, "Spin-valve and pseudo-spin-valve device switching for giant magnetoresistive random access memory applications," IEEE Trans. Magn., submitted for publication.