Ferromagnetic III-V and II-VI semiconductors

MRS Bulletin

Volumn 28, Issue 10, 2003, Pages 714-719

  Dietl, Tomasz ^a   Ohno, Hideo ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Magnetic properties; Semiconductors alloys; Spin polarized materials; Spintronics; Thin films

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; IONS; MAGNETIC ANISOTROPY; MANGANESE COMPOUNDS; POINT DEFECTS; SOLUBILITY; STRAIN; TEMPERATURE;

CURIE TEMPERATURE; FERROMAGNETIC SEMICONDUCTORS; SPIN STIFFNESS;

MAGNETIC SEMICONDUCTORS;

EID: 0142154303     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2003.211     Document Type: Article

References (75)

1. R.R. Gala̧zka, in Proc. 14th Int. Conf. on Physics of Semiconductors, Inst. Phys. Conf. Ser. 43, edited by B.L.H. Wilson (Institute of Physics, Bristol, 1978) p. 133
2. T. Dietl, in Physics in High Magnetic Fields, Springer Series in Solid-State Physics, Vol. 24, edited by S. Chikazumi and N. Miura (Springer, Berlin, 1981) p 344.
3. J.K. Furdyna and J. Kossut. eds., Diluted Magnetic Semiconductors, Semiconductors and Semi-metals, Vol. 25, R.K. Willardson and A.C. Beer, series editors (Academic Press, New York, 1988).
4. T. Dietl, in Materials, Properties and Preparations, edited by S. Mahajan, Handbook on Semiconductors, 2nd ed., Vol. 3B, edited by T.C. Moss (North-Holland, Amsterdam, 1994) p. 1251.
5. H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L.L. Chang, Phys. Rev. Lett. 68 (1992) p. 2664.
6. H. Ohno, A. Shen, F. Matsukara, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 69 (1996) p. 363.
7. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, Phys. Rev. B 57 (1998) p. R2037.
8. T. Dietl, A. Haury, and Y. Merle d'Aubigné, Phys. Rev. B 55 (1997) p. R3347.
9. A. Haury, A. Wasiela, A. Arnoult, J. Cibert, S. Tatarenko, T. Dietl, and Y. Merle d'Aubigné, Phys. Rev. Lett. 79 (1997) p. 511.
10. D. Ferrand, J. Cibert, A. Wasiela, C. Bourgognon, S. Tatarenko, G. Fishman, T. Andrearczyk, J. Jaroszyński, S. Koleśnik, T. Dietl, B. Barbara, and D. Dufeu, Phys. Rev. B 63 085201 (2001).
11. H. Ohno, Science 281 (1998) p. 951.
12. S. Koshihara, A. Oiwa, M. Hiraswa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi, and H. Munekata, Phys. Rev. Lett. 78 (1997) p. 617.
13. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, F. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature 408 (2000) p. 944.
14. H. Boukari, P. Kossacki, M. Bertolini, D. Ferrand, J. Cibert, S. Tatarenko, A. Wasiela, J.A. Gaj, and T. Dietl, Phys. Rev. Lett. 88 207204 (2002).
15. Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D.D. Awschalom, Nature 402 (1999) p. 790.
16. D.K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, and H. Ohno, Appl. Phys. Lett. 80 (2002) p. 1598.
17. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, and H. Ohno, Jpn. J. Appl. Phys. Part 2: Lett. 40 (2001) p. L1274.
18. E. Johnston-Halperin, D. Lofgreen, R.K. Kawakami, D.K. Young, L. Coldren, A.C. Gossard, and D.D. Awschalom, Phys. Rev. B 65 041306(R) (2002).
19. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, Appl. Phys. Lett. 77 (2000) p. 1873.
20. J. Sadowski, R. Mathieu, P. Svedlindh, M. Karlsteen, J. Kanski, Y. Fu, J.T. Domagala, W. Szuszkiewicz, B. Hennion, D.K Maude, R. Airey, and G. Hill, Thin Solid Films 412 (2002) p. 122.
21. X. Liu, Y. Sasaki, and J.K. Furdyna, Appl. Phys. Lett. 79 (2001) p. 2414.
22. M. Tanaka and Y. Higo, Phys. Rev. Lett. 87 026602 (2001).
23. R. Mattana, J.-M. George, H. Kaffrès, F. Nguyen Van Dau, A. Fert, B. Lépine, A. Guivarc̀h, and G. Jézéquel, Phys. Rev. Lett. 90 166601 (2003).
24. D. Chiba, F. Matsukura, and H. Ohno, 8th Symposium on the Physics and Application of Spin Related Phenomena in Semiconductors, Extended Abstracts (2002) p. 250.
25. T. Dietl, Semicond. Sci. Technol. 17 (2002) p. 377
26. F. Matsukura, H. Ohno, and T. Dietl, in Handbook of Magnetic Materials, Vol. 14, edited by K.H.J. Buschow (Elsevier, Amsterdam, 2002) p. 1.
27. S.V. Vonsovskii, Magnetism (John Wiley & Sons, New York, 1974).
28. A. Zunger, in Solid State Physics, Vol. 39, edited by H. Ehrenreich and D. Turnbull (Academic Press, New York, 1986) p. 275.
29. J.M. Langer, C. Delerue, M. Lannoo, and H. Heinrich, Phys. Rev. B 38 (1988) p. 7723.
30. P. Kacman, Semicond. Sci. Technol. 16 (2001) p. R25.
31. O is the total cation concentration.
32. S.J. Pearton, C.R. Abernathy, M.E. Overberg, G.T. Thaler, D.P. Norton, N. Theodoropoulou, A.F. Hebard, Y.D. Park, F. Ren, J. Kim, and L.A. Boatner, J. Appl. Phys. 93 (2003) p. 1.
33. J. Szczytko, W. Bardyszewski, and A. Twardowski, Phys. Rev. B 64 075306 (2001).
34. O.M. Fedorych, E.M. Hankiewicz, Z. Wilamowski, and J. Sadowski, Phys. Rev. B 66 045201 (2002).
35. T. Dietl, in Proc. 5th Int. Conf. on Nitride Semiconductors, Nara, Japan, 2003, Phys. Status Solidi B, in press (e-print:http://arXivorg/abs/cond-mat/030511).
36. K.M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J.K. Furdyna, Phys. Rev. B 65 201303(R) (2002).
37. J. De Boeck, R. Oesterholt, A. Van Esch, H. Bender, C. Bruynseraede, C. Van Hoof, and G. Borghs, Appl. Phys. Lett. 68 (1996) p. 2744.
38. F. Máca and J. Maŝek, Phys. Rev. B 65 235209 (2002).
39. J. Blinowski and P. Kacman, Phys. Rev. B 67 121204(R) (2003).
40. T. Hayashi, Y. Hashimoto, S. Katsumoto, and Y. Ive, Appl. Phys. Lett. 78 (2001) p. 1691.
41. K.C. Ku, S.J. Potashnik, R.F. Wang, S.H. Chu, P. Schiffer, N. Samarth, M.J. Seong, A. Mascarenhas, E. Johnston-Halperin, R.C. Meyers, A.C. Gossard, and D.D. Awschalom, Appl. Phys. Lett. 82 (2003) p. 2302.
42. K.W. Edmonds, K.Y. Wang, R.P. Campion, A.C. Neuman, C.T. Foxon, B.L. Gallagher, and P.C. Main, Appl. Phys. Lett. 81 (2002) p. 3010
43. K.W. Edmonds, K.W. Wang, R.P. Campion, A.C. Neuman, N.R.S. Farley, B.L. Gallagher, and C.T. Foxon, Appl. Phys. Lett. 81 (2002) p. 4991.
44. D. Chiba, K. Takamura, F. Matsukura, and H. Ohno, Appl. Phys. Lett. (2003) p. 3020.
45. M. Tanaka, Semicond. Sci. Technol. 17 (2002) p. 327.
46. S. von Molnàr, H. Munekata, H. Ohno, and L.L. Chang, J. Magn. Magn. Mater. 93 (1991) p. 356.
47. Y. Satoh, D. Okazawa, A. Nagashima, and J. Yoshino, Physica E 10 (2001) p. 196.
48. J. Blinowski, P. Kacman, and J.A. Majewski, Phys. Rev. B 53 (1996) p. 9524
49. J. Cryst. Growth 159 (1996) p. 972.
50. C. Zener, Phys. Rev. 81 (1951) p. 440
51. C. Zener, Phys. Rev. 83 (1951) p. 299.
52. K. Yosida, Theory of Magnetism (Springer, Berlin, 1996).
53. C. Zener, Phys. Rev. 82 (1951) p. 403.
54. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287 (2000) p. 1019.
55. T. Dietl, H. Ohno, and F. Matsukura, Phys. Rev. B 63 195205 (2001).
56. R. Skomski and C.M. Coey, Permanent Magnetism (Institute of Physics, Bristol, 1999).
57. J. König, T. Jungwirth, and A.H. MacDonald, Phys. Rev. B 64 184423 (2001).
58. T. Dietl, J. König and A.H. MacDonald, Phys. Rev. B 64 241201(R) (2001)
59. J. Cibert, D. Ferrand, H. Boukari, S. Tatarenko, A. Wasiela, P. Kossacki, and T. Dietl, Physica E 13 (2002) p. 489
60. T. Andrearczyk, J. Jaroszyński, M. Sawicki, L. Van Khoi, T. Dietl, D. Ferrand, C. Bourgognon, J. Cibert, S. Tatarenko, T. Fukumura, Z. Jin, H. Koinuma, and M. Kawasaki, in Proc. 25th Int. Conf. on Physics of Semiconductors, edited by N. Miura and T. Ando (Springer, Berlin, 2001) p. 235
61. J. Jaroszyński, T. Andrearczyk, G. Karczewski, J. Wróbel, T. Wojtowicz, E. Papis, E. Kamińska, A. Piotrowska, D. Popović, and T. Dietl, Phys. Rev. Lett. 89 266802 (2002)
62. T. Jungwirth, J. König, J. Sinova, J. Kucera, and A. H. MacDonald, Phys. Rev. B 66 012402 (2002)
63. Y.D. Park, A.T. Hanbicki, S.C. Erwin, C.S. Hellberg, J.M. Sullivan, J.E. Mattson, T.F. Ambrose, A. Wilson, G. Spanos and B.T. Jonker, Science 295 (2002) p. 652
64. T. Wojtowicz, G. Cywiński, W.L. Lim, X. Liu, M. Dobrowolska, J.K. Furdyna, K.M. Yu, W. Walukiewicz, G.B. Kim, M. Cheon, X. Chen, S.M. Wang, and H. Luo, Appl. Phys. Lett. 82 (2003) p. 4310
65. H. Munekata, A. Zaslavsky, P. Fumagalli, and R.J. Gambino, Appl. Phys. Lett. 63 (1993) p. 2929
66. A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A.Oiwa, A. Endo, S. Katsumoto, and Y. Iye, J. Cryst. Growth 175/176 (1997) p. 1069
67. K. Takamura, F. Matsukura, D. Chiba, and H. Ohno, Appl. Phys. Lett. 81 (2002) p. 2590
68. M. Sawicki, F. Matsukura, A. Idziaszek, G.M. Schott, G. Karczewski, C. Ruester, G. Schmidt, L.W. Molenkamp, and T. Dietl, J. Supercond./Novel Magn. 16 (2003) p. 3 (e-print:http://arXivorg/abs/cond-mat/0212511).
69. T. Shono, T. Hasegawa, T. Fukumura, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 77 (2000) p. 1363
70. U. Welp, V.K. Vlasko-Vlasov, X. Liu, J.K. Furdyna, and T. Wojtowicz, Phys. Rev. Lett. 90 167206 (2003)
71. T. Jungwirth, J. Sinova, K.Y. Wang, K.W. Edmonds, R.P. Campion, B.L. Gallagher, C.T. Foxon, Q. Nu, and A.H. MacDonald Appl. Phys. Lett. 83 (2003) p. 320
72. K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17 (2002) p. 367
73. H. Saito, V. Zayets, S. Yamagata, and K. Ando, Phys. Rev. Lett. 90 207202 (2003)
74. G. Karczewski, M. Sawicki, V. Ivanov, C. Ruester, G. Grabecki, F. Matsukura, L.W. Molenkamp, and T. Dietl, J. Supercond./Novel Magn. 16 (2003) p. 55
75. T. Kamatani and H. Akai, Physica E 10 (2001) p. 157