Two-dimensional carrier profiling on operating Si metal-oxide semiconductor field-effect transistor by scanning capacitance microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1371-1376

  Kimura, Kenjiro ^a   Kobayashi, Kei ^a   Yamada, Hirofumi ^a,b   Matsushige, Kazumi ^a   Usuda, Koji ^c  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONNECTORS; MICROPROCESSOR CHIPS; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DEVICES; SILICON;

ELECTRICAL CONNECTIONS; FOCUSED ION BEAM (FIB); SCANNING CAPACITANCE MICROSCOPY; SCANNING PROBE MICROSCOPY;

MOSFET DEVICES;

EID: 33744797109     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198859     Document Type: Article

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