Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2475-2477

  Okui, Toshiko ^a   Hasegawa, Shigehiko ^a   Nakashima, Hisao ^a   Fukutome, Hidenobu ^b   Arimoto, Hiroshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE DEPENDENCE; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; DEVICE STRUCTURES; DIFFERENT HEIGHTS; FEATURE SIZES; GATE OXIDE; MOSFETS; STM IMAGES;

DIELECTRIC DEVICES; MOS DEVICES; MOSFET DEVICES; TRANSISTORS; VISUALIZATION;

SCANNING TUNNELING MICROSCOPY;

EID: 79955983158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509118     Document Type: Article

References (6)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 8.
2. H. Fukutome, S. Hasegawa, K. Takano, H. Nakashima, T. Aoyama, and H. Arimoto, Appl. Surf. Sci. 144-145, 554 (1999). asu ASUSEE 0169-4332
3. H. Fukutome, K. Takano, H. Yasuda, K. Maehashi, S. Hasegawa, and H. Nakashima, Appl. Surf. Sci. 130-132, 346 (1998). asu ASUSEE 0169-4332
4. L. E. Katz, VLSI Technology, 2nd ed., edited by S. M. Sze (McGraw-Hill, New York, 1988), Chap. 3.
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 2.
6. J. Tersoff and N. D. Lang, Methods of Experimental Physics Vol. 27 Scanning Tunneling Microscopy, edited by J. A. Stroscio and W. J. Kaiser (Academic, New York, 1993), Chap. 1.