Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 364-368

  Eyben, P ^a,b   Alvarez, D ^a,c   Jurczak, M ^a   Rooyackers, R ^a   De Keersgieter, A ^a   Augendre, E ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALIBRATION; CARRIER CONCENTRATION; COMPUTER SOFTWARE; HOLOGRAPHY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; TRANSISTORS;

DOPANT PROFILES; SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM);

CMOS INTEGRATED CIRCUITS;

EID: 1642382583     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1638772     Document Type: Conference Paper

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