Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4837-4839

  Chim, W K ^a   Wong, K M ^a   Teo, Y L ^a   Lei, Y ^a   Yeow, Y T ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL JUNCTIONS; FORWARD SIMULATION; INTERFACE STATE DENSITY; INVERSE MODELING; LATERAL ELECTRIC FIELD; MINORITY CARRIER; OXIDE FIXED CHARGE; OXIDE LAYER; P-N JUNCTION; PROBE TIPS; SCANNING CAPACITANCE MICROSCOPY;

CAPACITANCE; ELECTRIC FIELDS; INVERSE PROBLEMS;

SEMICONDUCTOR JUNCTIONS;

EID: 79956014258     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1487899     Document Type: Article

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