New aspects of nanopotentiometry for complementary metal-oxide-semiconductor transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 586-594

  Trenkler, T ^a   Stephenson, R ^a   Jansen, P ^a   Vandervorst, W ^a,b   Hellemans, L ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALIBRATION; COMPUTER SIMULATION; MOS DEVICES; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS; VOLTAGE DISTRIBUTION MEASUREMENT;

NANOPOTENTIOMETRY; SCANNING PROBE MICROSCOPY (SPM);

TRANSISTORS;

EID: 0033698774     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591237     Document Type: Article

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