Accuracy of scanning capacitance microscopy for the delineation of electrical junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 406-410

  Stangoni, Maria ^a   Ciappa, Mauro ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MASS SPECTROMETRY; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING; TRANSISTORS;

JUNCTION DELINEATION; METALLURGIC JUNCTION (MJ); SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR JUNCTIONS;

EID: 1642280374     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1642646     Document Type: Conference Paper

References (10)

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7. DESSIS is a product of ISE 〈www.ise.ch〉
8. L. Ciampolini et al., Characterization and Metrology for ULSI Technology, 2001, pp. 647-650.
9. N. Duhayon et al., J. Vac. Sci. Technol. B (to be published).
10. M. Ciappa et al., Proc. IEEE 18, 804 (2001).