Characterization of plasma nitridation impact on lateral extension profile in 50 nm N-MOSFET by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1729-1733

  Fukutome, Hidenobu ^a   Saiki, Takashi ^a   Hori, Mitsuaki ^a   Tanaka, Takuji ^a   Nakamura, Ryou ^a   Arimoto, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

2 D carrier profile; Arsenic; Diffusion; Inverse modeling; Lateral abruptness; MOSFET; Nitrogen; Overlapping length; Scanning tunneling microscopy

Indexed keywords

ANNEALING; ARSENIC; DIFFUSION; NITRIDING; NITROGEN; PLASMAS; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

2-D CARRIER PROFILE; INVERSE MODELING; LATERAL ABRUPTNESS; OVERLAPPING LENGTH;

MOSFET DEVICES;

EID: 3142639128     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1729     Document Type: Conference Paper

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