Advances in experimental technique for quantitative two-dimensional dopant profiling by scanning capacitance microscopy

Review of Scientific Instruments

Volumn 70, Issue 1 PART II, 1999, Pages 158-164

  Zavyalov, V V ^a   McMurray, J S ^a   Williams, C C ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000492270     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1149558     Document Type: Review

References (26)

1. A. C. Diebold, M. R. Kump, J. J. Kopanski, and D. G. Seiler, J. Vac. Sci. Technol. B 14, 196 (1996).
2. J. S. McMurray, J. Kim, and C. C. Williams, J. Vac. Sci. Technol. B 15, 1011 (1997).
3. J. S. McMurray, J. Kim, and C. C. Williams, J. Vac. Sci. Technol. B 16, 344 (1998).
4. J. J. Kopanski, J. F. Marchiando, and J. R. Lowney, Mater. Sci. Eng., B 44, 46 (1997).
5. H. Edwards et al, Appl. Phys. Lett. 72, 698 (1998).
6. G. Neubauer, A. Erickson, C. C. Williams, J. J. Kopansky, M. Rodgers, and D. Adderton, J. Vac. Sci. Technol. B 14, 426 (1996).
7. R. N. Keiman, M. L. O'Malley, F. H. Baumann, J. P. Garno, and G. L. Timp, Tech. Dig. Int. Electron Devices Meet., 1997, p. 691.
8. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, 4300 Stevens Creek Blvd. San Jose, CA, 1997).
9. Y. Huang and C. C. Williams, J. Vac. Sci. Technol. A 14, 1168 (1996).
10. A. Erickson (private communication).
11. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
12. J. F. Marchiando, J. J. Kopansky, and J. R. Lowney, in Proceedings of the Fourth International Workshop on Measurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park, NC, 6-9 April 1997, p. 65-1.
13. L. Ley, T. Teuschler, K. Mahr, S. Miyazaki, and M. Hunhausen, J. Vac. Sci. Technol. B 14, 2845 (1996).
14. C. C. Williams, Semiconductor Research Corporation, Contract Review, Austin, TX, 15-16 July 1997.
15. J. S. McMurray and C. C. Williams, Proceedings of the International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, 23-27 March 1998 (to be published).
16. V. A. Ukraintsev, F. R. Potts, R. M. Wallace, L. K. Magel, H. Edwards, and M-C. Chang, in Ref. 15 (to be published).
17. S. Kar and W. E. Dahlke, Solid-State Electron. 15, 221 (1972);
18. W. E. Dahlke and S. M. Sze, Solid-State Electron. ibid. 10, 865 (1967).
19. G. J. Pietsch, G. S. Higashi, and Y. J. Chabal, Appl. Phys. Lett. 64, 3115 (1994);
20. G. J. Pietsch, Appl. Phys. A: Mater. Sci. Process. 60, 347 (1995).
21. B. Brar, G. D. Wilk, and A. C. Seabaugh, Appl. Phys. Lett. 69, 2728 (1996).
22. E. H. Nicollian, C. N. Berglund, P. F. Schmidt, and J. M. Andrews, J. Appl. Phys. 42, 5654 (1971).
23. D. R. Young, E. A. Irene, D. J. Di Maria, and R. F. De Keersmaecker, J. Appl. Phys. 50, 6366 (1979).
24. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys. 68, 1272 (1990);
25. D. Graf, M. Grundner, and R. Schulz, J. Appl. Phys. ibid. 68, 5155 (1990).
26. T. Takahagi, I. Nagai, A. Ishitani, H. Kuroda, and Y. Nagasawa, J. Appl. Phys. 64, 3516 (1988).