Method for the study of semiconductor device operation using scanning capacitance microscopy

Review of Scientific Instruments

Volumn 74, Issue 1 I, 2003, Pages 127-133

  Nakakura, C Y ^a   Tangyunyong, P ^a   Hetherington, D L ^a   Shaneyfelt, M R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARRIER COMMUNICATION; ELECTRIC POTENTIAL; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR DEVICES;

EID: 0037283641     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527722     Document Type: Article

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