Study of gate length dependence of two-dimensional carrier profile in N-FET by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2395-2399

  Fukutome, Hidenobu ^a   Aoyama, Takayuki ^a   Arimoto, Hiroshi ^a,b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Channel; Extension; MOSFET; Pocket; Roll off characteristic; Scanning tunneling microscopy; Short channel effect; Two dimensional carrier profiling

Indexed keywords

CHARGE CARRIERS; ELECTRODES; ION IMPLANTATION; SCANNING TUNNELING MICROSCOPY; SURFACE TOPOGRAPHY; THRESHOLD VOLTAGE;

CHANNEL; EXTENSION; POCKET; ROLL-OFF CHARACTERISTICS; SHORT-CHANNEL EFFECT; TWO-DIMENSIONAL CARRIER PROFILING;

MOSFET DEVICES;

EID: 21244441497     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2395     Document Type: Conference Paper

References (9)

1. P. Eyben, D. Alvarez, M. Jurczak, R. Rooyackers, A. De Keersgieter, E. Augendre and W. Vandervorst: J. Vac. Sci. & Technol. B 22 (2004) 364.
2. E. Bussmann and C. C. Williams: Rev. Sci. Instrum. 75 (2004) 422.
3. G. H. Buh, J. J. Kopanski, J. F. Marchiando, A. G. Birdwell and Y. Kuk: J. Appl. Phys. 94 (2003) 2680.
4. Y. Naitou and N. Ookubo: Jpn. J. Appl. Phys. 43 (2004) 1848.
5. H. Fukutome, T. Aoyama and H. Arimoto: Int. Electron Device Meet. Tech. Dig. (2001) p. 67.
6. T. Okui, S. Hasegawa, H. Nakashima, H. Fukutome and H. Arimoto: Appl. Phys. Lett. 81 (2002) 2475.
7. H. Fukutome, H. Arimoto, S. Hasegawa and H. Nakashima: J. Vac. Sci. & Technol. B 22, (2004) 358.
8. H. Fukutome, Y. Momiyama, H. Nakao, T. Aoyama and H. Arimoto: Int. Electron Device Meet. Tech. Dig. (2003) p. 485.
9. H. Fukutome, T. Saiki, M. Hori, T. Tanaka, R. Nakamura and H. Arimoto: Jpn. J. Appl. Phys. 43 (2004) 1729.