Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 549-554

  Zavyalov, V V ^a   McMurray, J S ^a   Stirling, S D ^a   Williams, C C ^a   Smith, H ^b  

^a UNIVERSITY OF UTAH   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPY (SCM);

MOSFET DEVICES;

EID: 0033713505     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591230     Document Type: Article

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