Si-diffused GaN for enhancement-mode GaN MOSFET on Si applications

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 685-690

  Jang, Soohwan ^a   Ren, F ^a   Pearton, S J ^a   Gila, B P ^a   Hlad, M ^a   Abernathy, C R ^a   Yang, Hyucksoo ^a   Pan, C J ^b   Chyi, Jenn Inn ^b   Bove, P ^c   Lahreche, H ^c   Thuret, J ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c Picogiga International SAS   (France)

Author keywords

Diffusion; GaN; Metal oxide semiconductor field effect transistor (MOSFET)

Indexed keywords

ACCUMULATED CHANNELS; METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET); SATURATION BEHAVIOR; UNDOPED GAN;

ACTIVATION ENERGY; DIFFUSION; ENCAPSULATION; MAGNESIA; MOSFET DEVICES; SILICON; THERMAL EFFECTS;

GALLIUM NITRIDE;

EID: 33646745164     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0121-1     Document Type: Conference Paper

References (35)

1. G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M.A. Khan, M.S. Shur, and R. Gaska, Phys. Status Solidi A 188, 219 (2001).
2. A. Tarakji, X. Hu, A. Koudymov, G. Simin, J. Yang, M.A. Khan, M.S. Shur, and R. Gaska, Solid-State Electron. 46, 1211 (2002).
3. A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, and M.A. Khan, IEEE Electron Devices Lett. 23, 449 (2002).
4. G. Simin, A. Koudymov, H. Fatima, J.P. Zhang, J. Yang, M.A. Khan, X. Hu, A. Tarakji, R. Gaska, and M.S. Shur, IEEE Electron Devices Lett. 23, 458 (2002).
5. M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M.S. Shur, Appl. Phys. Lett. 77, 1339 (2000).
6. X. Hu, A. Koudymov, G. Simin, J. Yang, M.A. Khan, A. Tarakji, M.S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 2832 (2001).
7. F. Ren, M. Hong, S.N.G. Chu, M.A. Marcus, M.J. Schurman, A. Baca, S.J. Pearton, and C.R. Abernathy, Appl. Phys. Lett. 73, 3839 (1998).
8. J.W. Johnson et al., Appl. Phys. Lett. 77, 3230 (2000).
9. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S.P. DenBaars, and U.K. Mishra, IEEE Electron Devices Lett. 21, 421 (2000).
10. H.C. Casey, Jr., G.G. Fountain, R.G. Alley, B.P. Keller, and S.P. DenBaars, Appl. Phys. Lett. 68, 1850 (1996).
11. R. Therrien, G. Lucovsky, and R.F. Davis, Phys. Stat. Solidi A 176, 793 (1999).
12. T. Hashizume, E. Alekseev, D. Pavlidis, K.S. Boutros, and J. Redwing, J. Appl. Phys. 88, 1983 (2000).
13. M.A. Khan, X. Hu, G. Simin, G. Lunev, J. Yang, R. Gaska, and M.S. Shur, IEEE Electron Devices Lett. 21, 63 (2000).
14. J.W. Johnson et al., J. Electrochem. Soc. 146, 4303 (2001).
15. T.S. Lay, M. Hong, T. Kwo, T.P. Lee, W. Hung, and D.T. Huang, Solid-State Electron. 45, 1679 (2001).
16. C. Steven, S. Binari, K. Doverspike, G. Keiner, H.B. Dietrich, and A.E. Wickenden, Solid-State Electron. 41, 177 (1997).
17. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 73, 809 (1998).
18. P.A. Ivanov, M.E. Levinshtein, G. Simin, X. Hu, J. Yang, M.A. Khan, S.C. Rumyantsev, M.S. Shur, and R. Gaska, Electron. Lett. 37, 1479 (2001).
19. P. Chen, W. Wang, S.J. Chua, and Y.D. Zheng, Appl. Phys. Lett. 79, 3530 (2001).
20. D. Mistele, T. Rotter, R. Ferretti, F. Fedler, H. Klausiag, O. K. Semchinova, J. Stemmer, J. Aderhold and J. Graul, Mater. Res. Soc. Symp. Proc. 639 G11.42.1 (2001).
21. B.P. Gila et al., Phys. Status Solidi A 188, 239 (2001).
22. M. Hong et al., J. Vac. Sci. Technol. B 18, 1453 (2000).
23. Y. Irokawa and Y. Nakano, Solid-State Electron. 46, 1467 (2002).
24. Y. Nakano, T. Kachi, and T. Jimbo, J. Vac. Sci. Techol. B21, 2220 (2003).
25. D.J. Fu, Y.H. Kwon, T.W. Kang, C.J. Park, K.H. Baek, H.Y. Cho, D.H. Shin, C.H. Lee, and K.S. Chung, Appl. Phys. Lett. 80, 446 (2002).
26. B. Luo et al., Appl. Phys. Lett. 80, 1661 (2002).
27. R. Mehandru, B.P. Gila, J. Kim, J.W. Johnson, K.P. Lee, B. Luo, A.H. Onstine, C.R. Abernathy, S.J. Pearton, and F. Ren, Electrochem. Solid-State Lett. 5, G51 (2002).
28. J. Kim, R. Mehandru, B. Luo, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, and Y. Irokawa, Appl. Phys. Lett. 81, 373 (2002).
29. J. Kim, R. Mehandru, B. Luo, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, and Y. Irokawa, Appl. Phys. Lett. 80, 4555 (2002).
30. J. Kim et al., J. Electrochem. Soc. 149, G482 (2002).
31. Y. Irokawa et al., Appl. Phys. Lett. 84, 2919 (2004).
32. F. Ren, M. Hong, W.S. Hobson, J.M. Kuo, J.R. Lothian, J.P. Mannaerts, J. Kuo, S.N.G. Chu, Y.K. Chen, and A.Y. Cho, Tech. Dig.-Int. Electron Devices Meet. 217, 943 (1996).
33. C.F. Lin, H.C. Cheng, G.C. Chi, C.J. Bu, and M.S. Feng, Appl. Phys. Lett. 76, 1878 (2000).
34. SIMS performed by Charles Evans and Associates, Redwood City, CA (2006).
35. S.J. Pearton, J.C. Zolper, R.J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).