Inversion behavior in thermally oxidized p-GaN metal-oxide-semiconductor capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2220-2222

  Nakano, Yoshitaka ^a,b   Kachi, Tetsu ^a   Jimbo, Takashi ^b  

^a Rd Management Section   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; INTERFACES (MATERIALS); MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

ATMOSPHERIC PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION; HALL EFFECT MEASUREMENT; THERMAL DRY OXIDATION;

MOS CAPACITORS;

EID: 0242509068     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1612937     Document Type: Article

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