ArF excimer laser resists based on fluoroalcohol

Polymers for Advanced Technologies

Volumn 17, Issue 2, 2006, Pages 104-115

  Ito, Hiroshi ^a   Truong, H D ^a   Allen, R D ^a   Li, W ^b   Varanasi, P R ^b   Chen, K J ^b   Khojasteh, M ^b   Huang, W S ^b   Burns, S D ^c   Pfeiffer, D ^c  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

193 nm lithography; Chemical amplification; Photoresists; Resists; Transparency

Indexed keywords

CARBOXYLIC ACIDS; DISSOLUTION; DRY ETCHING; EXCIMER LASERS; GAS LASERS; LITHOGRAPHY; POLYMETHYL METHACRYLATES; SWELLING; TRANSPARENCY;

CHEMICAL AMPLIFICATION; EXCIMER LASER RESISTS; FLUOROALCOHOL;

PHOTORESISTS;

CARBOXYLIC ACIDS; DISSOLUTION; DRY ETCHING; EXCIMER LASERS; GAS LASERS; LITHOGRAPHY; PHOTORESISTS; POLYMETHYL METHACRYLATES; SWELLING; TRANSPARENCY;

LASER; ORGANIC ACID; POLYMETHYL METHACRYLATE;

EID: 33644931353     PISSN: 10427147     EISSN: 10991581     Source Type: Journal    
DOI: 10.1002/pat.672     Document Type: Review

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