Rational design in cyclic olefin resists for sub-100nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 61-69

  Li, Wenjie ^a   Varanasi, P Rao ^a   Lawson, Margaret C ^a   Kwong, Ranee W ^a   Chen, Kuang Jung ^a   Ito, Hiroshi ^b   Truong, Hoa ^b   Allen, Robert D ^b   Yamamoto, Masafumi ^c   Kobayashi, Eiichi ^c   Slezak, Mark ^d  

^a IBM   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c JSR CORPORATION   (Japan)

^d JSR Micro   (United States)

Author keywords

157nm resist; 193nm resist; Contact hole; Cyclic olefin; Dissolution behavior; Etch resistance; Hexafluoroisopropanol; PEB sensitivity

Indexed keywords

DENSITY (OPTICAL); DISSOLUTION; ETCHING; FLUORINE COMPOUNDS; HYDROPHOBICITY; POLYOLEFINS; SURFACE ROUGHNESS; SWELLING;

CYCLIC OLEFIN POLYMER; ETCH RESISTANCE; HEXAFLUOROISOPROPANOL; POST EXPOSURE BAKE;

PHOTORESISTS;

EID: 0141834847     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485100     Document Type: Conference Paper

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