SCOPUS 정보 검색 플랫폼

Journal of Photopolymer Science and Technology

Volumn 15, Issue 4, 2002, Pages 693-698

Development of SSQ based 157 nm photoresist[1]

(6) Hung, Raymond J a Yamachika, Mikio a Iwasawa, Haruo b Hayashi, Akihiro b Yamahara, Noboru b Shimokawa, Tsutomu b

a JSR Microelectronics (United States)

b JSR CORPORATION (Japan)

Author keywords

157 nm lithography; Resists; Silsesquioxane

Indexed keywords

FLUOROCARBON; ORGANOSILICON DERIVATIVE; SILOXANE; SILSESQUIOXANE; UNCLASSIFIED DRUG;

ARTICLE; FILM; HYDROPHILICITY; LITHOGRAPHY; PHOTOLYSIS; POLYMERIZATION; SCANNING ELECTRON MICROSCOPY; SOLUBILITY; SYNTHESIS; TECHNOLOGY; THICKNESS; ULTRAVIOLET RADIATION; VACUUM;

EID: 0036363151 PISSN: 09149244 EISSN: None Source Type: Journal
DOI: 10.2494/photopolymer.15.693 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.