Silsesquioxane-based 193 nm bilayer resists: Characterization and lithographic evaluation

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue I, 2005, Pages 109-121

  Ito, Hiroshi ^a   Truong, Hoa D ^a   Burns, Scan D ^b   Pfeiffer, Dirk ^b   Huang, Wu Song ^c   Khojasteh, Mahmoud M ^c   Varanasi, P Rao ^c   Lerce, Mike ^b,c  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

193 nm lithography; Bilayer resists; Chemical amplification; Deprotection; Dissolution kinetics; Fluoroalcohol; Hydrogen bonding; Quartz crystal microbalance; Silanol condensation

Indexed keywords

BILAYER RESISTS; CHEMICAL AMPLIFICATION; DEPROTECTION; DISSOLUTION KINETICS; FLUOROALCOHOL; SILANOL CONDESATION;

COMPOSITION; CONDENSATION; CRYSTALLINE MATERIALS; DISSOLUTION; ETCHING; HYDROGEN BONDS; ORGANIC ACIDS; PHOTOLITHOGRAPHY; SILICONES; THERMAL EFFECTS;

PHOTORESISTS;

EID: 24644442148     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598847     Document Type: Conference Paper

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