Bilayer technology for ArF and F2 lithography: The development of resists to minimize silicon outgassing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 433-441

  Barclay, George ^a   Kanagasabapathy, Subbareddy ^a   Pohlers, Gerd ^a   Mattia, Joe ^a   Xiong, Kao ^a   Ablaza, Sheri ^a   Cameron, J ^a   Zampini, Anthony ^a   Zhang, Tao ^a   Yamada, Shintaro ^a   Huby, Francois ^b   Wiley, Kenneth ^b  

^a SHIPLEY COMPANY   (United States)

^b ROHM AND HAAS COMPANY   (United States)

Author keywords

ArF; Bilayer; F2; Outgassing; Polymer architecture; Silicon

Indexed keywords

CONTAMINATION; DEGASSING; ETCHING; FLUORINE COMPOUNDS; IMAGING SYSTEMS; IMAGING TECHNIQUES; LASER APPLICATIONS; MATHEMATICAL MODELS; OXIDATION; SILICON;

ARGON FLUORIDE; BILAYER TECHNOLOGY; POLYSILSESQUIOXANE; SILICON OUTGASSING;

LITHOGRAPHY;

EID: 0141499948     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485141     Document Type: Conference Paper

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