Positive bilayer resists for 248- and 193-nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 219-227

  Sooriyakumaran, Ratnam ^a   Wallraff, Gregory M ^a   Larson, Carl E ^a   Fenzel Alexander, Debra ^a   Di Pietro, Richard A ^a   Opitz, Juliann ^a   Hofer, Donald C ^a   LaTulip Jr , Douglas C ^b   Simons, John P ^b   Petrillo, Karen E ^b   Babich, Katherina ^b   Angelopoulos, Marie ^b   Lin, Qinghuang ^c   Katnani, Ahmad D ^c  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

193 nm; 248 nm lithography; Bilayer resist; Silicon

Indexed keywords

LITHOGRAPHY;

193 NM; 193-NM LITHOGRAPHIES; 248 NM LITHOGRAPHY; ACID-LABILE; BILAYER RESIST; HIGH RESOLUTIONS; METHACRYLATE MONOMERS;

MONOMERS;

EID: 0000582196     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312411     Document Type: Conference Paper

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