Bilayer resists process for ArF lithography

Journal of Photopolymer Science and Technology

Volumn 11, Issue 4, 1998, Pages 667-672

  Morisawa, Taku ^a   Matsuzawa, Nobuyuki N ^a   Mori, Sigeyasu ^a   Kaimoto, Yuko ^a   Endo, Masayuki ^a   Ohfuji, Takeshi ^a   Kuhara, Koichi ^a   Sasago, Masaru ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Arf lithography; Bilayer resist process; Line edge roughness; Si containing resist; Silsesquioxane

Indexed keywords

EID: 0000360322     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.11.667     Document Type: Article

References (8)

1. For example U. Schaedeli, E. Tinguely, A. J. Blankeny, P. Falcigno and R. Kunz ; proc. SPIE 2724(1996)344
2. K. Watanabe, M. Igarashi, E. Yano, T. Namiki, K. Nozaki and Y. Kuramitu : J. Photoplym. Sci. & Technol.,8(1995)p. 16.
3. T. W. Weideman, O. Joubert, A.M. Joshi and R. I. Koestelak : proc. SPIE 2438(1995)496
4. T. Morisawa and H. Fukuda: Jp. J. Appl. Phys. Vol. 35(1996) pp. 6366-6369
5. T. Morisawa, N. Matsuzawa, S. Mori, Y. Kaimoto, M. Endo, K. Kuhara, T. Ohfji and M. Sasago :J. Photoplym. Sci. & Technol., 10 (1997) p. 595.
6. J. Bicerano, Prediction of Polymer Properties, Marcel Dekker, New York, 1993.
7. L. B. Kier, and L. H. Hall, Molecular Connectivity in Chemistry and Drug Research, Academic Press, New York, 1976.
8. L. B. Kier, and L. H. Hall, Molecular Connectivity in Structure-Activity Analysis, John Wiley and Sons, New York, 1986. This program is available from Molecular Simulations Inc., San Diego, CA.