Chemically amplified Si-contained resist using silsesquoxane for Arf Lithography (CASUAL) and its application to bi-layer resist process

Journal of Photopolymer Science and Technology

Volumn 10, Issue 4, 1997, Pages 589-594

  Morisawa, Taku ^a   Matsuzawa, Nobuyuki ^a   Mori, Shigeyasu ^a   Kaimoto, Yuko ^a   Endo, Masayuki ^a   Kuhara, Koichi ^a   Ohfuji, Takeshi ^a   Sasago, Masaru ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

ArF lithography; Bi layer resist process; Chemically amplified resist; Dry development; Silsesquoxane

Indexed keywords

EID: 0010250711     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.10.589     Document Type: Article

References (8)

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