Evolution of a 193 nm bilayer resist for manufacturing

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 I, Issue , 2002, Pages 403-409

  Kwong, R ^a   Khojasteh, M ^a   Lawson, P ^a   Hughes, T ^a   Varanasi, P R ^a   Brunsvold, B ^a   Allen, R ^b   Brock, P ^b   Sooriyakumaran, R ^b   Truong, H ^b   Mahorowala, A ^c   Medeiros, D ^c  

^a IBM MICROELECTRONICS   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

193 nm lithography; Bilayer resist; Resist outgassing

Indexed keywords

ATTENUATION; DEGASSING; DENSITY (OPTICAL); DISSOLUTION; ETCHING; MASKS; OPTIMIZATION; POLYMERS; SEMICONDUCTING SILICON;

BILAYER RESISTS;

PHOTORESISTS;

EID: 2342628989     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474239     Document Type: Article

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