Direct observation of Si lattice strain and its distribution in the Si(001)-SiO2 interface transition layer

Applied Physics Letters

Volumn 71, Issue 24, 1997, Pages 3504-3506

  Kim, Young Pil ^a,c   Choi, Si Kyung ^a   Kim, Hyun Kyong ^b   Moon, Dae Won ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000437892     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120373     Document Type: Article

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