A model of the stress induced leakage current in gate oxides

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 285-288

  Larcher, L ^a   Paccagnella, A ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Modeling, mos capacitors; Simulation; Stress induced leakage current; Ultrathin sio2

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; ELECTRON TUNNELING; INDUCED CURRENTS; LEAKAGE CURRENTS; ULTRATHIN FILMS;

GATE OXIDES; STRESS INDUCED LEAKAGE CURRENTS;

MOS CAPACITORS;

EID: 0035248925     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902728     Document Type: Article

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