EFFECT OF HYDROGEN ON TRAP GENERATION, POSITIVE CHARGE TRAPPING, AND TIME-DEPENDENT DIELECTRIC BREAKDOWN OF GATE OXIDES.

Electron device letters

Volumn 9, Issue 6, 1988, Pages

  Nissan Cohen, Y ^a   Gorczyca, T ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; OXIDES - ELECTRIC BREAKDOWN;

GATE OXIDES; HYDROGEN EFFECT; POSITIVE CHARGE TRAPPING; TIME DEPENDENT DIELECTRIC BREAKDOWN; TRAP GENERATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0023290486     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)