Radiation-induced depassivation of latent plasma damage

Microelectronic Engineering

Volumn 60, Issue 3-4, 2002, Pages 439-450

  Cellere, G ^a   Paccagnella, A ^a   Pantisano, L ^a   Valentini, M G ^b   Flament, O ^c   Mousseau, O ^c   Fuochi, P G ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b ST Microelecronics   (Italy)

^c CEA DAM DIF   (France)

^d CNR   (Italy)

Author keywords

CMOS; Gate oxide; Plasma damage; Radiation

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTERFACES (MATERIALS); PASSIVATION; PLASMA APPLICATIONS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

LATENT PLASMA DAMAGE; RADIATION-INDUCED DEPASSIVATION;

MICROELECTRONIC PROCESSING;

EID: 0036532414     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00704-3     Document Type: Article

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