Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or x-ray irradiation

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 566-573

  Ceschia, M ^a   Paccagnella, A ^a   Sandrin, S ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONS; GATES (TRANSISTOR); ION BEAMS; IONIZING RADIATION; KINETIC THEORY; LEAKAGE CURRENTS; MOS CAPACITORS; RADIATION EFFECTS; X RAYS;

RADIATION INDUCED LEAKAGE CURRENT; RADIATION INDUCED SOFT BREAKDOWN; SOFT BREAKDOWN PHENOMENA; ULTRA THIN GATE OXIDES;

OXIDES;

EID: 0034205654     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856481     Document Type: Article

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