A model of radiation induced leakage current (RJLC) in ultra-thin gate oxides

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6, 1999, Pages 1553-1561

  Larcher, L ^a   Paccagnella, A ^a   Ceschia, M ^a   Ghidini, G ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOSIMETRY; ELECTRON TRAPS; ELECTRON TUNNELING; IONIZING RADIATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXIDES; ULTRATHIN FILMS;

GAUSSIAN DISTRIBUTION; RADIATION INDUCED LEAKAGE CURRENT; SCHRODINGER EQUATION; TRAP DENSITY; ULTRATHIN GATE OXIDE;

RADIATION EFFECTS;

EID: 0033312210     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819120     Document Type: Article

References (23)

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