Deposition and characterization of HfO2 high k dielectric films

Journal of Materials Research

Volumn 19, Issue 6, 2004, Pages 1775-1782

  Lo, Wai ^a   Kamath, Arvind ^a   Kher, Shreyas ^b   Metzner, Craig ^b   Wen, Jianguo ^c   Chen, Zhihao ^d  

^a AGERE SYSTEMS   (United States)

^b APPLIED MATERIALS INC   (United States)

^c University of Illinois at Urbana Champaign   (United States)

^d Malvern Instruments Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SILICON WAFERS; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FILM DEPOSITION; GATE DIELECTRICS; HAFNIUM DIOXIDE; INTERFACIAL DENSITY OF STATE; THICKNESS UNIFORMITY;

HAFNIUM COMPOUNDS;

EID: 3142695596     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0247     Document Type: Article

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