Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics

Applied Physics Letters

Volumn 81, Issue 21, 2002, Pages 4038-4039

  Sim, Hyunjun ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DEUTERIUM; DIELECTRIC MATERIALS; HYDROGEN INORGANIC COMPOUNDS; INTERFACES (MATERIALS);

POSTMETAL ANNEALING;

ANNEALING;

EID: 0037132306     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1523636     Document Type: Article

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