Pulsed deposition of metal-oxide thin films using dual metal precursors

Applied Physics Letters

Volumn 84, Issue 3, 2004, Pages 398-400

  Conley Jr , J F ^a   Ono, Y ^a   Tweet, D J ^a   Solanki, R ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); SPECTROSCOPIC ELLIPSOMETERS (SE);

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELLIPSOMETRY; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MONOLAYERS; OXIDATION; PERMITTIVITY; PHOTOLITHOGRAPHY; SATURATION (MATERIALS COMPOSITION); THICKNESS MEASUREMENT; X RAY DIFFRACTION;

THIN FILMS;

EID: 1242265233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643545     Document Type: Article

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