Effect of annealing conditions on a hafnium oxide reinforced SiO2 gate dielectric deposited by plasma-enhanced metallorganic CVD

Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

  Choi, Kyu Jeong ^a   Shin, Woong Chul ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINITY; FLATBAND VOLTAGE SHIFTS; INTERFACE TRAP DENSITY;

HAFNIUM COMPOUNDS;

EID: 0036504040     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1450617     Document Type: Article

References (18)