High-k properties of atomic-layer-deposited Hfo2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2o oxidant

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5503-5505

  Cho, Moonju ^a   Park, Hong Bae ^a   Park, Jaehoo ^a   Lee, Suk Woo ^a   Hwang, Cheol Seong ^a   Jang, Gi Hoon ^b   Jeong, Jaehack ^b  

^a Seoul National University   (South Korea)

^b Ever tek Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON ENERGY LEVELS; HAFNIUM COMPOUNDS; HYDROGEN INORGANIC COMPOUNDS; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); INTERFACIAL LAYERS;

METALLIC FILMS;

EID: 0942288633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637128     Document Type: Article

References (14)

1. J. K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B.-Y. Nguyen, B. E. White, Jr., S. Dakshina-Murthy, R. S. Rai, Z.-X. Jiang, R. Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D. Roan, M. Kottke, and R. B. Gregory, J. Vac. Sci. Technol. B 21, 11 (2003).
2. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 80, 1975 (2002).
3. H. Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, J. Appl. Phys. 94, 551 (2003).
4. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Kharnankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Becan, T. Grider, J. McPherson, and L. Colombo, Tech. Dig. VLSI Symp. 2002, 148.
5. T. Suntola and J. Antson, US Patent No. 4058430, 1977.
6. M. Cho, J. Park, H. B. Park, C. S. Hwang, J. H. Jeong, and K. S. Hyun, Appl. Phys. Lett. 81, 334 (2002).
7. M. Cho, H. B. Park, J. Park, C. S. Hwang, J.-C. Lee, S.-J. Oh, J. Jeong, K. S. Hyun, H.-S. Kang, Y.-W. Kim, and J.-H. Lee, J. Appl. Phys. 94, 2563 (2003).
8. J.-H. Lee, Y.-S. Kim, H.-S. Jung, J.-H. Lee, N.-I. Lee, H.-K. Kang, J.-H. Ku, H. S. Kang, Y.-K. Kim, K.-H. Cho, and K.-P. Suh, Tech. Dig. VLSI Symp. 2002, 84.
9. M. Cho, J. Park, H. B. Park, C. S. Hwang, J. Jeong, K. S. Hyun, Y.-W. Kim, C.-B. Oh, and H.-S. Kang, Appl. Phys. Lett. 81, 3630 (2002).
10. P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, and J. G. Ekerdt, J. Appl. Phys. 91, 4353 (2002).
11. T. Nishiguchi, H. Nonaka, S. Ichmura, Y. Morikawa, M. Kekura, and M. Miyamoto, Appl. Phys. Lett. 81, 2190 (2002).
12. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
13. J. Park, B. K. Park, M. Cho, C. S. Hwang, K. Oh, and D. Y. Yang, J. Electrochem. Soc. 149, G89 (2002).
14. H. Hwang, W. Ting, B. Maiti, D.-L. Kwong, and J. Lee, Appl. Phys. Lett. 57, 1010 (1990).