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Volumn 150, Issue 4, 2003, Pages

HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium

(20) Schaeffer, J a Edwards, N V a Liu, R a Roan, D a Hradsky, B a Gregory, R a Kulik, J a Duda, E a Contreras, L a Christiansen, J a Zollner, S a Tobin, P a Nguyen, B Y a Nieh, R a Ramon, M a Rao, R a Hegde, R a Rai, R a Baker, J a Voight, S a

a MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; OPTICAL PROPERTIES; PERMITTIVITY; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; HAFNIUM DIOXIDE; HIGH PERMITTIVITY GATE DIELECTRICS; TETRAKIS DIETHYLAMIDO HAFNIUM;

HAFNIUM COMPOUNDS;

EID: 18244426116 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1554729 Document Type: Article

Times cited : (65)

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